Analysis of influence of threading dislocation on device characteristics of InSb HEMT

Shota Hatsushiba

Presentation information

Oral presentation

Code-sharing session » 14.3/15.4 Code-sharing session

[17a-A27-1~11] 14.3/15.4 Code-sharing session

Wed. Sep 17, 2014 9:00 AM - 12:00 PM A27 (N302)

10:15 AM - 10:30 AM

[17a-A27-6] Analysis of influence of threading dislocation on device characteristics of InSb HEMT

^○Shota Hatsushiba¹, Shohei Nagai¹, Sachie Fujikawa¹, Shinsuke Hara², Akira Endoh², Issei Watanabe^1,2, Akifumi Kasamatsu², Hiroki Fujishiro^1,2 (TUS¹, NICT²)

Keywords:InSb,HEMT,貫通転位

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