The 75th JSAP Autumn Meeting, 2014

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Oral presentation

03. Optics and Photonics » 3.13 Semiconductor optical devices

[17a-C6-1~6] 3.13 Semiconductor optical devices

Wed. Sep 17, 2014 11:00 AM - 12:30 PM C6 (C212)

11:15 AM - 11:30 AM

[17a-C6-2] Development of high-quality a-SiO:H film using triode type PECVD and low temperature deposition

○Riku Yamamoto1, Porponth Sichanugrist1, Makoto Konagai1,2 (Tokyo Tech1, PVREC2)

Keywords:a-SiO,トライオード,太陽電池