Formation of ferromagnetic conductive filament in Ni/HfO<sub>2</sub>/Pt resistive switching memory

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

Wed. Sep 17, 2014 2:00 PM - 5:45 PM A16 (E307)

5:15 PM - 5:30 PM

^○Shintaro Otsuka¹, Yoshifumi Hamada¹, Daisuke Ito¹, Tomohiro shimizu¹, Shoso Shingubara¹ (Kansai Univ.¹)

Keywords:抵抗変化メモリ,ReRAM,磁気抵抗効果