[17p-A19-1~12] Low-Temperature Growth of Group-IV Semiconductors on Insulator -Emerging New Crystallization Techniques -

[17p-A19-7] Crystal orientation control of Ge thin films on amorphous substrates
by metal-induced layer exchange

^○Kaoru Toko¹, Koki Nakazawa¹, Naoki Oya¹, Noritaka Usami², Takashi Suemasu¹ (Univ. of Tsukuba¹, Nagoya Univ.²)

Keywords:ゲルマニウム,金属誘起成長,結晶方位制御