Electrical properties of Si doped AlInN/GaN heterostructures grown by MOVPE

Kazuki Ikeyama

Presentation information

Oral presentation

Code-sharing session » 14.3/15.4 Code-sharing session

[17p-A27-1~14] 14.3/15.4 Code-sharing session

Wed. Sep 17, 2014 2:00 PM - 5:45 PM A27 (N302)

3:30 PM - 3:45 PM

[17p-A27-7] Electrical properties of Si doped AlInN/GaN heterostructures grown by MOVPE

^○Kazuki Ikeyama¹, Toshiki Yasuda¹, Yugo Kozuka¹, Kosuke Horikawa¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Fac. Sci.&Tech.Meijo Univ.¹, ARC, Nagoya Univ.²)

Keywords:AlInN

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