The 75th JSAP Autumn Meeting, 2014

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Oral presentation

17. Nanocarbon Technology » 17.4 Device application

[17p-B1-1~3] 17.4 Device application

Wed. Sep 17, 2014 1:15 PM - 2:00 PM B1 (Seminar1)

1:15 PM - 1:30 PM

[17p-B1-1] Fabrication of top-gated MoS2 FET with Al2O3 insulator

○Naruki Ninomiya1,2, Takahiro Mori2, Noriyuki Uchida2, Eiichiro Watanabe3, Daiju Tsuya3, Satoshi Moriyama3, Masatoshi Tanaka1, Atsushi Ando2 (Yokohama National Univ.1, AIST2, NIMS3)

Keywords:MoS2,トランジスタ,high-k