[17p-C6-1~10] 3.13 Semiconductor optical devices

[17p-C6-6] Supression of surface oxidation on InAs/GaSb superlattice by nitrogen plasma treatment

^○Yukihiro Tsuji¹, Hiroshi Inada¹, Kenichi Machinaga¹, Sundararajan Balasekaran¹, Kouhei Miura¹, Yashuhiro Iguchi¹, Tsukuru Katsuyama¹, Haruyoshi Katayama², Masafumi Kimata³ (Sumitomo Electric Industries, Ltd.¹, Japan Aerospace Exploration Agency², Ritsumeikan Univ.³)

Keywords:MIR,PD