Impurity incorporation and the electrical conduction mechanism of ZnO films fabricated with N<sub>2</sub>/O<sub>2</sub> remote plasma generated near atmospheric pressure

Yukinori Nose

Presentation information

Poster presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

[17p-PA5-1~22] Nanocarbon Technology

Wed. Sep 17, 2014 4:00 PM - 6:00 PM PA5 (Gymnasium1)

ポスター掲示時間16:00～18:00(PA5会場)

4:00 PM - 6:00 PM

[17p-PA5-3] Impurity incorporation and the electrical conduction mechanism of ZnO films fabricated with N₂/O₂ remote plasma generated near atmospheric pressure

^○(DC)Yukinori Nose¹, Takuya Kiguchi¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Tsuyoshi Uehara², Norifumi Fujimura¹ (Osaka Prefecture Univ.¹, SEKISUI CHEMICAL CO., LTD.²)

Keywords:ZnO,CVD,常圧プラズマ

« Previous in this session
Next in this session »

▲

Presentation information

[17p-PA5-1~22] Nanocarbon Technology

[17p-PA5-3] Impurity incorporation and the electrical conduction mechanism of ZnO films fabricated with N2/O2 remote plasma generated near atmospheric pressure

[17p-PA5-3] Impurity incorporation and the electrical conduction mechanism of ZnO films fabricated with N₂/O₂ remote plasma generated near atmospheric pressure