[17p-PB3-1~48] Poster
10.1 Creation of new materials
10.2 Spin torque, spin current, circuits, and measurement technologies
10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies
10.4 Semiconductors, organic, optical, and quantum spintronics

[17p-PB3-10] Intuitive Explanation of Anisotropic Magnetoresistance (AMR) Effect and Necessary Condition for Half-Metallic Ferromagnet ``Negative AMR''

^○Satoshi Kokado¹, Yuta Kitagawa¹, Masakiyo Tsunoda² (Shizuoka Univ.¹, Tohoku Univ.²)

Keywords:異方性磁気抵抗,異方性磁気抵抗,ハーフメタリック