[17p-PB3-1~48] Poster
10.1 Creation of new materials
10.2 Spin torque, spin current, circuits, and measurement technologies
10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies
10.4 Semiconductors, organic, optical, and quantum spintronics

[17p-PB3-26] Improvement of the spin-Seebeck voltage by annealing effect

^○Yuta Saiga¹, Kotaro Mizunuma¹, Yasushi Kono¹, Jeong Chun Ryu², Hiroshi Ono², Makoto Kohda², Eiichi Okuno¹ (DENSO CORPORATION¹, Tohoku University²)

Keywords:スピンゼーベック効果