Annealing temperature dependence of properties of magnetic tunnel junction with perpendicular easy axis using MgO/CoFeB/Ta/CoFeB/MgO recording structure

Eli Enobio

Presentation information

Short Oral presentation

10. Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[17p-S2-35~43] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Wed. Sep 17, 2014 2:38 PM - 2:56 PM S2 (S2)

ポスター掲示時間16:00～18:00(PB会場)

2:38 PM - 2:40 PM

▲ [17p-S2-35] Annealing temperature dependence of properties of magnetic tunnel junction with perpendicular easy axis using MgO/CoFeB/Ta/CoFeB/MgO recording structure

^〇(P)Eli Enobio^1,2, Hideo Sato^2,3, Shunsuke Fukami^2,3, Shoji Ikeda^1,2,3, Fumihiro Matsukura^4,1,2, Hideo Ohno^1,2,3,4 (Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ.¹, CSIS, Tohoku Univ.², CIES, Tohoku Univ.³, WPI AIMR, Tohoku Univ.⁴)

Keywords:magnetic tunnel junction,tunnel magnetoresistance,perpendicular anisotropy