[18a-A15-1~7] 13.5 Si-English Session

▲ [18a-A15-1] Impact of Doping Concentration Regimes on Low-Temperature Tunneling in Nanoscale SOI-FETs

^〇(P)Daniel Moraru¹, Yuuki Takasu¹, Takahiro Tsutaya¹, Arup Samanta¹, Le The Anh², Muruganathan Manoharan², Takeshi Mizuno¹, Hiroshi Mizuta^2,3, Michiharu Tabe¹ (Shizuoka Univ.¹, JAIST², Univ. of Southampton³)

Keywords:dopant atom devices,doping concentration regimes,tunneling