[18a-A15-1~7] 13.5 Si-English Session

▲ [18a-A15-1] Impact of Doping Concentration Regimes on Low-Temperature Tunneling in Nanoscale SOI-FETs

^〇（P）Daniel Moraru¹，Yuuki Takasu¹，Takahiro Tsutaya¹，Arup Samanta¹，Le The Anh²，Muruganathan Manoharan²，Takeshi Mizuno¹，Hiroshi Mizuta^2,3，Michiharu Tabe¹ (Shizuoka Univ.¹，JAIST²，Univ. of Southampton³)

キーワード：dopant atom devices,doping concentration regimes,tunneling