[18a-A15-1~7] 13.5 Si-English Session

▲ [18a-A15-2] Effect of Dopants in Tunnel Barriers of Selectively Doped SOI-FETs

^〇Arup Samanta¹, Daniel Moraru¹, Takahiro Tsutaya¹, Le The Anh², Muruganatha Manoharan², Takeshi Mizuno¹, Hiroshi Mizuta^2,3, Michiharu Tabe¹ (SU¹, JAIST², Unv. of Southampton³)

Keywords:Silicon nanoelectronics,Dopant atom transistor