The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[18a-A20-1~11] 15.3 III-V-group epitaxial crystals

Thu. Sep 18, 2014 9:00 AM - 12:00 PM A20 (E312)

9:30 AM - 9:45 AM

[18a-A20-3] Absorption properties of InGaAsN/GaAsSb quantum wells grown on InP substrates

Shigetoshi Shirafuji1, Kouhei MIura2, Yasuhiro Iguchi2, ○Yuichi Kawamura1 (Osaka Prefecture Univ.1, Sumitomo Electric Industries, Ltd.2)

Keywords:Semiconductors,Quantum wells,Dilute Nitride semiconductors