The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[18a-A20-1~11] 15.3 III-V-group epitaxial crystals

Thu. Sep 18, 2014 9:00 AM - 12:00 PM A20 (E312)

11:00 AM - 11:15 AM

[18a-A20-8] Fabrication and characterization of InSb HEMT structures using graded buffer layer

Tatsuya Taketsuru1, Takaomi Maeda1, Daisuke Tsuji1, Sachie Fujikawa1, Hiroki Fujishiro1 (Tokyo Univ. of Science1)

Keywords:InSb,HEMT