The 75th JSAP Autumn Meeting, 2014

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18a-A22-1~12] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 9:00 AM - 12:15 PM A22 (E314)

11:30 AM - 11:45 AM

[18a-A22-10] Comparison of current collapse characteristics on AlGaN/GaN HEMT with Al2O3 passivation

○Chihoko Mizue1, Hiroyuki Ichikawa1, Kazutaka Inoue1 (SEI, TDL1)

Keywords:GaN HEMT,Al2O3,電流コラプス