Influence of SiN<sub>x</sub>, SiO<sub>2</sub> passivation layer to AlGaN/GaN structure

Akira Miyawaki

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18a-A22-1~12] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 9:00 AM - 12:15 PM A22 (E314)

11:45 AM - 12:00 PM

[18a-A22-11] Influence of SiN_x, SiO₂ passivation layer to AlGaN/GaN structure

^○Akira Miyawaki¹, Mari Okamoto¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Wataru Saito³, Hiromichi Ohashi¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, IGSSE², Toshiba corp.1³)

Keywords:AlGaN/GaN,保護膜

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Presentation information

[18a-A22-1~12] 14.3 Electron devices and Process technology

[18a-A22-11] Influence of SiNx, SiO2 passivation layer to AlGaN/GaN structure

[18a-A22-11] Influence of SiN_x, SiO₂ passivation layer to AlGaN/GaN structure