The 75th JSAP Autumn Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18a-A22-1~12] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 9:00 AM - 12:15 PM A22 (E314)

11:00 AM - 11:15 AM

[18a-A22-8] Improved Current Collapse in AlGaN/GaN HEMTs by O2 Plasma Treatment

○Yoshiki Sakaida1, Hirokuni Tokuda1, Masaaki Kuzuhara1 (Graduate School of Engineering, University of Fukui1)

Keywords:AlGaN/GaN HEMT,酸素プラズマ処理,電流コラプス現象