The 75th JSAP Autumn Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[18a-A24-1~13] 14.4 Optical properties and light-emitting devices

Thu. Sep 18, 2014 9:00 AM - 12:30 PM A24 (E317)

9:00 AM - 9:15 AM

[18a-A24-1] Formation of AlN thin films by direct nitridation of Al thin films in NH3 and N2 gas

○Shun Kajihara1, Masato Hamasaki1, Hiroshi Katsumata1 (Meiji Univ.1)

Keywords:AlN,直接窒化