[18a-A24-1~13] 14.4 Optical properties and light-emitting devices

△ [18a-A24-3] Formation of new Eu optical center by Zn,O-codoping in Eu-doped GaN

^○Masaaki Matsuda¹, Wanxin Zhu¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ¹)

Keywords:GaN,semiconductor