Enhancement of Eu photoluminescence intensity in Eu-doped GaN by Localized Surface Plasmon Resonance

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Thu. Sep 18, 2014 9:00 AM - 12:30 PM A24 (E317)

9:45 AM - 10:00 AM

^○(M2)Tomohiro Inaba¹, Takanori Kojma¹, Atsusi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

Keywords:Eu,GaN