Characterization of energy transfer efficiency in Eu-doped GaN by two-wavelength excited photoluminescence

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Thu. Sep 18, 2014 9:00 AM - 12:30 PM A24 (E317)

10:00 AM - 10:15 AM

^○Kohei Okada¹, Ryuta Wakamatsu¹, Dolf Timmerman¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

Keywords:Eu,GaN,二波長励起