[18a-A24-1~13] 14.4 Optical properties and light-emitting devices

[18a-A24-6] Effects of Strain on Mutual Energy Transfer between Eu Luminescent Centers in Eu-Doped GaN Grown on Various Substrates

^○Atsushi Koizumi¹, Ryuta Wakamatsu¹, Dolf Timmerman¹, Kazuteru Tanaka¹, Takanori Kojima¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

Keywords:希土類転科半導体,Eu添加GaN