[18a-A8-1~10] 6.2 Carbon-based thin films

△ [18a-A8-5] High Breakdown Voltage Characteristics of ALD-Al₂O₃ C-H Diamond MOSFETs

^○Yuya Kitabayashi¹, Tetsuya Yamada¹, Dechen Xu¹, Hidetoshi Tsuboi¹, Tatsuya Saito¹, Daisuke Matsumura¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

Keywords:半導体,ダイヤモンド,電界効果トランジスタ