[18a-C5-1~15] 15.4 III-V-group nitride crystals

[18a-C5-10] Growth GaN on 4-in.-diameter Si(110) substrates by MOCVD - Influence of the thin AlN/GaN superlattice interlayer periods -

^○xuqiang shen¹, tokio takahashi¹, toshihide ide¹, mitsuaki shimizu¹ (AIST¹)

Keywords:GaN