The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-C5-1~15] 15.4 III-V-group nitride crystals

Thu. Sep 18, 2014 8:30 AM - 12:30 PM C5 (Open Hall)

8:45 AM - 9:00 AM

△ [18a-C5-2] Characterization of relaxation process in GaInN/GaN heterostructure

○(M1)Koji Ishihara1, Yasunari Kondo1, Hiroyuki Matsubara1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Isamu Akasaki1,2 (Meijo Univ.1, Akasaki Reserchi Center, Nagoya Univ.2)

Keywords:GaInN,その場観察X線回折測定法,格子緩和