Characterization of (In)GaN Epitaxial Layers Grown on ScAlMgO<sub>4</sub>(0001) Substrates by Metal-organic Vapor Phase Epitaxy

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 18, 2014 8:30 AM - 12:30 PM C5 (Open Hall)

10:30 AM - 10:45 AM

^○(D)Takuya Ozaki¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

Keywords:MOVPE,InGaN,ScAlMgO4