P-type Graphene on Ion-Implanted 4H-SiC by Pre-Plasma Treatment

Presentation information

Poster presentation

17. Nanocarbon Technology » 17. Nanocarbon Technology (Poster)

Thu. Sep 18, 2014 9:30 AM - 11:30 AM PA3 (Gymnasium1)

ポスター掲示時間9:30～11:30(PA3会場)

9:30 AM - 11:30 AM

^○(M1)Yusuke Shiina¹, Daiki Aoyagi¹, Tomoaki Nishimura², Tohru Nakamura¹ (Hosei Univ.¹, Research Center of Ion Beam Technology, Hosei Univ.²)

Keywords:グラフェン,SiC