The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.7 Fundamentals of epitaxy

[18p-A20-1~6] 15.7 Fundamentals of epitaxy

Thu. Sep 18, 2014 1:15 PM - 2:45 PM A20 (E312)

1:30 PM - 1:45 PM

[18p-A20-2] Relationship between surface supersaturation and vertical growth rate in GaAs microchannel epitaxy

○Masafumi Tomita1, Hiroyuki Takakura1, Yosuke Mizuno1, Muneki Iwakawa1, Jumpei Yamada1, Daisuke Kanbayashi1, Takahiro Maruyama1, Shigeya Naritsuka1 (Meijo Univ.1)

Keywords:GaAs,表面過飽和度,MCE