The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.7 Fundamentals of epitaxy

[18p-A20-1~6] 15.7 Fundamentals of epitaxy

Thu. Sep 18, 2014 1:15 PM - 2:45 PM A20 (E312)

2:00 PM - 2:15 PM

[18p-A20-4] Ab initio-based approach to InAs(001)-(2×3) wetting layer surface

○Tomonori Ito1, Toru Akiyama1, Kohji Nakamura1 (Mie Univ.1)

Keywords:半導体,表面