The 75th JSAP Autumn Meeting, 2014

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18p-A22-1~15] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 2:00 PM - 6:00 PM A22 (E314)

2:30 PM - 2:45 PM

[18p-A22-3] Transfer characteristics in AlGaN /GaN Schottky contncts on semi-insulating GaN substrate

○Takuma Nanjo1, Akifumi Imai1, Kenichiro Kurahashi1, Yosuke Suzuki1, Muneyoshi Suita1, Toshiyuki Tanaka1, Eiji Yagyu1 (Mitsubishi Electric Corp.1)

Keywords:GaN,HEMT