150-nm InAlN/GaN HEMT fabricated by Y-gate process

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 2:00 PM - 6:00 PM A22 (E314)

2:45 PM - 3:00 PM

^○Hiroyuki Ichikawa¹, Chihoko Mizue¹, Isao Makabe¹, Yasunori Tateno¹, Ken Nakata¹, Kazutaka Inoue¹ (Sumitomo Electric Industries, Ltd.¹)

Keywords:GaN,HEMT,InAlN