Reduction of threshold voltage in ALD-Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-HEMT by post-deposition annealing

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 2:00 PM - 6:00 PM A22 (E314)

3:30 PM - 3:45 PM

^○(M2)Yusuke Yoshida¹, Toshiharu Kubo¹, Makoto Miyoshi¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

Keywords:GaN,MIS,ALD