Germanium Nano-Wires Fabrication And Size Control by Combined Top-Down Process Neutral Beam Etching And Hydrogen Radical Treatment

M.T. Chentir

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一般セッション(口頭講演)

14．半導体B（探索的材料・物性・デバイス） » 14.2 超薄膜・量子ナノ構造

[18p-A27-1~17] 14.2 超薄膜・量子ナノ構造

2014年9月18日(木) 14:00 〜 19:00 A27 (N302)

15:30 〜 15:45

▲ [18p-A27-5] Germanium Nano-Wires Fabrication And Size Control by Combined Top-Down Process Neutral Beam Etching And Hydrogen Radical Treatment

^〇M.T. Chentir^1,2，Takeru Okada¹，Naoyuki Kawai³，Kazumi Wada³，Seiji Samukawa^1,2,4 (Inst. of Fluid Sci., Tohoku Univ.¹，CREST Japan Sci. and Tech. Agency²，Dept. of Mat. Eng., Univ. of Tokyo³，WPI-Advanced Inst. for Materials Res., Tohoku Univ.⁴)

キーワード：Germanium nanowires,Etching