[18p-B1-1~22] 17.3 Exploration of new functions and evaluation of basic properties

[18p-B1-8] Charge Transfer Region of GOS-Graphene on Microfabricated Si Substrate

^○Keiichiro Tashima¹, Takayuki Ide¹, Naoka Nagamura², Koji Horiba³, Masaharu Oshima³, Hirokazu Fukidome¹, Maki Suemitsu¹ (Tohoku Univ.RIEC¹, Tohoku Univ.IMRAM², SRRO³)

Keywords:グラフェン,エピタキシャル成長,微細加工