4:00 PM - 6:00 PM
[18p-PA7-6] The Formation of WO3 and Its Application to Resistive Random Access Memory
Keywords:抵抗変化メモリ,三酸化タングステン,ReRAM
Poster presentation
06. Thin Films and Surfaces » 6.3 Oxide-based electronics
Thu. Sep 18, 2014 4:00 PM - 6:00 PM PA7 (Gymnasium1)
ポスター掲示時間16:00~18:00(PA7会場)
4:00 PM - 6:00 PM
Keywords:抵抗変化メモリ,三酸化タングステン,ReRAM