[18p-PA7-1~16] 6.3 Oxide-based electronics

[18p-PA7-8] Controlling resistive switching properties of conductive bridge memory by supplying ionic liquid

^○Ryosuke Ogata¹, Kohei Watanabe¹, Akinori Harada^1,2, Satoru Kishida^1,3, Toshiyuki Itoh¹, Kentaro Kinoshita^1,3 (Tottori Univ.¹, Kanto Denka Kogyo², Tottori Univ. Electronic Display Research Center³)

Keywords:抵抗変化型メモリ,導電性ブリッジメモリ,イオン液体