[18p-PB8-1~17] 14.4 Optical properties and light-emitting devices

[18p-PB8-16] Preparation of Europium-doped GaN grown on GaAs(100) by radical nitrogen assisted compound-source MBE and conventional MBE

^○Yuki Koyama¹, Shinji Yudate¹, Akira Miyata¹, Sho Shirakata¹ (ehime Univ.¹)

Keywords:GaN