The 75th JSAP Autumn Meeting, 2014

Presentation information

Print

Oral presentation

13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19a-A15-1~9] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Fri. Sep 19, 2014 9:30 AM - 12:00 PM A15 (E306)

10:00 AM - 10:15 AM

[19a-A15-3] Substrate orientation dependence on Si surface flattening process by sacrificial oxidation

○Sohya Kudoh1, Nithi Atthi1, Shun-ichiro Ohmi1 (Tokyo Tech.1)

Keywords:表面平坦化プロセス,シリコン,デバイス特性