[19a-A17-1~12] 13.2 Insulator technology

[19a-A17-4] Flatband voltage measurements of Si-MOS capacitors with La₂O₃/HfO₂/SiO₂ multi-stacked gate dielectrics

^○Ryo Fukui¹, Yoshinori Nakamura¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Hitoshi Wakabayashi², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Keywords:high-k膜