[19a-A17-1~12] 13.2 Insulator technology

[19a-A17-6] [JSAP Paper Award Speech]（30min.）
Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species

^○Tomoyuki Suwa¹, Akinobu Teramoto¹, Yuki Kumagai¹, Kenichi Abe¹, Xiang Li¹, Yukihisa Nakao¹, Masashi Yamamoto², Hiroshi Nohira³, Takayuki Muro⁴, Toyohiko Kinoshita⁴, Shigetoshi Sugawa¹, Tadahiro Ohmi¹, Takeo Hattori¹ (Tohoku University¹, Stella Chemifa², Tokyo City University³, JASRI⁴)