The 75th JSAP Autumn Meeting, 2014

Presentation information

Print

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[19a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

Fri. Sep 19, 2014 9:00 AM - 12:30 PM A19 (E311)

9:00 AM - 9:15 AM

[19a-A19-1] Numerical calculation of Silicon Epitaxial Growth Rate for 450mmφ Substrate

○Misako Matsui1, Hitoshi Habuka1 (Yokohama national University1)

Keywords:化学気相堆積法