[19a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

[19a-A19-11] Noise Characterization of Undoped Si/SiGe Quantum Dot Device

^○Takumu Honda¹, Kenta Takeda², Jun Kamioka¹, Jun Yoneda³, Marian Marx³, Tetsuo Kodera^4,5, Seigo Tarucha^2,3,5, Shunri Oda¹ (QNERC-Tokyo Tech¹, The Univ. of Tokyo², RIKEN³, Tokyo Tech⁴, NanoQuine-The Univ. of Tokyo⁵)

Keywords:量子ドット,Si,半導体