[19a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

[19a-A19-4] Solid phase crystallization for electron irradiated a-Ge on SiO2 evaluated by Raman spectroscopy

^○Eishiro Murakami¹, Kenta Moto¹, Tatsushi Nomitsu¹, Hideyuki Hara², Hiroto Nishimura², Kenichiro Takakura¹, Isao Tsunoda¹ (KNCT¹, Bruker Biospin K.K.²)

Keywords:固相結晶成長,電子線,Ge