Theoretical Investigation of Deposition Mechanisms of Etchant Species in SiO<sub>2</sub> Etching Process using Quantum Chemical Molecular Dynamics Method

Hiroshi Ito

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Oral presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[19a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

Fri. Sep 19, 2014 9:00 AM - 12:30 PM A19 (E311)

11:15 AM - 11:30 AM

△ [19a-A19-9] Theoretical Investigation of Deposition Mechanisms of Etchant Species in SiO₂ Etching Process using Quantum Chemical Molecular Dynamics Method

^○(D)Hiroshi Ito¹, Takuya Kuwahara¹, Yuji Higuchi¹, Nobuki Ozawa¹, Seiji Samukawa², Momoji Kubo¹ (Graduate School of Engineering, Tohoku Univ.¹, Inst. of Fluid Science, Tohoku Univ.²)

Keywords:量子分子動力学,エッチング,シミュレーション

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Presentation information

[19a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

△ [19a-A19-9] Theoretical Investigation of Deposition Mechanisms of Etchant Species in SiO2 Etching Process using Quantum Chemical Molecular Dynamics Method

△ [19a-A19-9] Theoretical Investigation of Deposition Mechanisms of Etchant Species in SiO₂ Etching Process using Quantum Chemical Molecular Dynamics Method