Spin relaxation in Zn doped GaAs grown by VGF method

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Fri. Sep 19, 2014 9:00 AM - 12:15 PM A26 (E319)

10:30 AM - 10:45 AM

^○Yuya Yasue¹, Kazuki Honda¹, Masaki Asakawa¹, Atsushi Tackeuchi¹ (Waseda Univ.¹)

Keywords:Zn-GaAs