[19a-C5-1~10] Materials Science of Singularity in Nitride semiconductors～Characterization and Crystallography～

[19a-C5-2] Multi-peak emission characteristics from InGaN/GaN MQW on m-plane substrate

^○Kaori Kurihara¹, Satoru Nagao¹, Atsushi Yamaguchi² (Mitsubishi Chemical Corp.¹, Kanazawa Inst. Tech.²)

Keywords:窒化物半導体,m面GaN,InGaN