The 75th JSAP Autumn Meeting, 2014

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19a-PB4-1~9] 14.1 Physical properties of exploratory materials

Fri. Sep 19, 2014 9:30 AM - 11:30 AM PB4 (Gymnasium2)

ポスター掲示時間9:30~11:30(PB4会場)

9:30 AM - 11:30 AM

[19a-PB4-1] Effects of carbon doping to n-type β-FeSi2 on electric properties of n-type β-FeSi2/p-type Si heterojunction diodes

○(M2)Motoki Takahara1, Suguru Funasaki1, Mostafa Tarek1, Ryuji Baba1, Nathaporn Promros2, Shaban Mahmoud3, Aki Tominaga1, Tsuyoshi Yoshitake1 (Kyushu Univ.1, King Mongkut's Inst. Tech. Ladkrabang2, South Valley Univ.3)

Keywords:鉄シリサイド,FeSi2