The 75th JSAP Autumn Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19a-PB4-1~9] 14.1 Physical properties of exploratory materials

Fri. Sep 19, 2014 9:30 AM - 11:30 AM PB4 (Gymnasium2)

ポスター掲示時間9:30～11:30(PB4会場)

9:30 AM - 11:30 AM

[19a-PB4-2] Fabrication of spin valve junctions based on Fe3Si/FeSi2/Fe3Si artificial films

○Yuki Asai1, Kenichiro Sakai1,2, Kazuya Ishibashi1, Kaoru Takeda3, Tsuyoshi Yoshitake1 (Dept. Appl. Sci. Electr. Mat. Kyushu Univ.1, Kurume Nat. Coll of Tech.2, Fukuoka Inst. Tech.3)

Keywords:鉄シリサイド